| PART |
Description |
Maker |
| ATF16V8B ATF16V8BQ ATF16V8BQL |
250 gate electrically erasable PLD, 20 pins, standard power, 5V
250 gate electrically erasable PLD, 20 pins, quarter power, 5V
250 gate electrically erasable PLD, 20 pins, quarter and low power, 5V
|
Atmel
|
| MJ21194 MJ21193 ON1989 MJ2194 |
16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
MOTOROLA INC
ON Semiconductor
Motorola, Inc
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| C44AFGR6250ZA0J |
Film, Metallized Polypropylene, Power, C44A, 250 uF, 5%, 400 V, 250 V
|
Kemet Corporation
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| BZT52-C10S BZT52-C11S BZT52-C12S BZT52-C13S BZT52- |
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Dual Negative-Edge-Triggered J-K Flip-Flop With Clear And Preset 16-SOIC -40 to 85 表面贴装硅稳压二极管
PTSE 23C 1#16,22#20 PIN RECP
Replaced by SN74LVC10A : Triple 3-Input Positive-NAND Gate 14-SOIC -40 to 85
SURFACE MOUNT SILICON ZENER DIODES
|
PanJit International, Inc.
PanJit International Inc.
PANJIT[Pan Jit International Inc.]
|
| STPS10L60CFP STPS10L60C 6426 STPS10L60 STPS10L60CF |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
POWER SCHOTTKY RECTIFIER
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| 74AUP1G885GN 74AUP1G885GS 74AUP1G885DC |
Low-power dual function gate AUP/ULP/V SERIES, DUAL 3-INPUT XOR GATE, PDSO8
Low-power dual function gate 低功耗双功能
|
NXP Semiconductors N.V.
|
